High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH(3)) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared wi...

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Detalles Bibliográficos
Autores principales: Austin, Aaron J., Echeverria, Elena, Wagle, Phadindra, Mainali, Punya, Meyers, Derek, Gupta, Ashish Kumar, Sachan, Ritesh, Prassana, S., McIlroy, David N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7762107/
https://www.ncbi.nlm.nih.gov/pubmed/33291493
http://dx.doi.org/10.3390/nano10122434

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7762107/
https://www.ncbi.nlm.nih.gov/pubmed/33291493
http://dx.doi.org/10.3390/nano10122434

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