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High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures
Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH(3)) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared wi...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7762107/ https://www.ncbi.nlm.nih.gov/pubmed/33291493 http://dx.doi.org/10.3390/nano10122434 |