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Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning
This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7762273/ https://www.ncbi.nlm.nih.gov/pubmed/33297348 http://dx.doi.org/10.3390/nano10122443 |
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author | Giammaria, Tommaso Jacopo Gharbi, Ahmed Paquet, Anne Nealey, Paul Tiron, Raluca |
author_facet | Giammaria, Tommaso Jacopo Gharbi, Ahmed Paquet, Anne Nealey, Paul Tiron, Raluca |
author_sort | Giammaria, Tommaso Jacopo |
collection | PubMed |
description | This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-r-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology. |
format | Online Article Text |
id | pubmed-7762273 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-77622732020-12-26 Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning Giammaria, Tommaso Jacopo Gharbi, Ahmed Paquet, Anne Nealey, Paul Tiron, Raluca Nanomaterials (Basel) Article This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-r-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology. MDPI 2020-12-07 /pmc/articles/PMC7762273/ /pubmed/33297348 http://dx.doi.org/10.3390/nano10122443 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Giammaria, Tommaso Jacopo Gharbi, Ahmed Paquet, Anne Nealey, Paul Tiron, Raluca Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning |
title | Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning |
title_full | Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning |
title_fullStr | Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning |
title_full_unstemmed | Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning |
title_short | Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning |
title_sort | resist-free directed self-assembly chemo-epitaxy approach for line/space patterning |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7762273/ https://www.ncbi.nlm.nih.gov/pubmed/33297348 http://dx.doi.org/10.3390/nano10122443 |
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