Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications

In this paper, the poly-Si nanowire (NW) field-effect transistor (FET) sensor arrays were fabricated by adopting low-temperature annealing (600 °C/30 s) and feasible spacer image transfer (SIT) processes for future monolithic three-dimensional integrated circuits (3D-ICs) applications. Compared with...

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Detalles Bibliográficos
Autores principales: Tang, Siqi, Yan, Jiang, Zhang, Jing, Wei, Shuhua, Zhang, Qingzhu, Li, Junjie, Fang, Min, Zhang, Shuang, Xiong, Enyi, Wang, Yanrong, Yang, Jianglan, Zhang, Zhaohao, Wei, Qianhui, Yin, Huaxiang, Wang, Wenwu, Tu, Hailing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7763022/
https://www.ncbi.nlm.nih.gov/pubmed/33322344
http://dx.doi.org/10.3390/nano10122488

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7763022/
https://www.ncbi.nlm.nih.gov/pubmed/33322344
http://dx.doi.org/10.3390/nano10122488

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