Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (P(out)). The short-circuit current density (J(SC)) and open-circuit voltage (V(OC)) of the 17 keV electron-beam...

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Detalles Bibliográficos
Autores principales: Yoon, Young Jun, Lee, Jae Sang, Kang, In Man, Lee, Jung Hee, Kim, Dong Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7763209/
https://www.ncbi.nlm.nih.gov/pubmed/33322847
http://dx.doi.org/10.3390/mi11121100

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7763209/
https://www.ncbi.nlm.nih.gov/pubmed/33322847
http://dx.doi.org/10.3390/mi11121100

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