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Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density
In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (P(out)). The short-circuit current density (J(SC)) and open-circuit voltage (V(OC)) of the 17 keV electron-beam...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7763209/ https://www.ncbi.nlm.nih.gov/pubmed/33322847 http://dx.doi.org/10.3390/mi11121100 |