Study of Radiation-Induced Defects in p-Type Si(1−x)Ge(x) Diodes before and after Annealing

In this work, electrically active defects of pristine and 5.5 MeV electron irradiated p-type silicon–germanium (Si(1−x)Ge(x))-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and Laplace DLTS (L-DLTS) techniques. The p-type SiGe alloys with sligh...

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Detalles Bibliográficos
Autores principales: Ceponis, Tomas, Lastovskii, Stanislau, Makarenko, Leonid, Pavlov, Jevgenij, Pukas, Kornelijus, Gaubas, Eugenijus
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7763288/
https://www.ncbi.nlm.nih.gov/pubmed/33322844
http://dx.doi.org/10.3390/ma13245684

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7763288/
https://www.ncbi.nlm.nih.gov/pubmed/33322844
http://dx.doi.org/10.3390/ma13245684

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