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Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot

In this work, we demonstrate the enhanced synaptic behaviors in trilayer dielectrics (HfO(2)/Si(3)N(4)/SiO(2)) on highly doped n-type silicon substrate. First, the three dielectric layers were subjected to material and chemical analyses and thoroughly investigated via transmission electron microscop...

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Detalles Bibliográficos
Autores principales: Ryu, Hojeong, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7763874/
https://www.ncbi.nlm.nih.gov/pubmed/33317045
http://dx.doi.org/10.3390/nano10122462