Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance

Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well. In this work, we present a second improved version of the “current-assisted” sin...

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Detalles Bibliográficos
Autores principales: Jegannathan, Gobinath, Van den Dries, Thomas, Kuijk, Maarten
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7764224/
https://www.ncbi.nlm.nih.gov/pubmed/33322420
http://dx.doi.org/10.3390/s20247105

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7764224/
https://www.ncbi.nlm.nih.gov/pubmed/33322420
http://dx.doi.org/10.3390/s20247105

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