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Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance
Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well. In this work, we present a second improved version of the “current-assisted” sin...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7764224/ https://www.ncbi.nlm.nih.gov/pubmed/33322420 http://dx.doi.org/10.3390/s20247105 |