Lattice Defects and Exfoliation Efficiency of 6H-SiC via H(2)(+) Implantation at Elevated Temperature

Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as “io...

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Detalles Bibliográficos
Autores principales: Wang, Tao, Yang, Zhen, Li, Bingsheng, Xu, Shuai, Liao, Qing, Ge, Fangfang, Zhang, Tongmin, Li, Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7765353/
https://www.ncbi.nlm.nih.gov/pubmed/33333943
http://dx.doi.org/10.3390/ma13245723

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7765353/
https://www.ncbi.nlm.nih.gov/pubmed/33333943
http://dx.doi.org/10.3390/ma13245723

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