Ti Alloyed α-Ga(2)O(3): Route towards Wide Band Gap Engineering

The suitability of Ti as a band gap modifier for [Formula: see text]-Ga(2)O(3) was investigated, taking advantage of the isostructural [Formula: see text] phases and high band gap difference between Ti(2)O(3) and Ga(2)O(3). Films of (Ti,Ga)(2)O(3) were synthesized by atomic layer deposition on sapph...

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Detalles Bibliográficos
Autores principales: Barthel, Armin, Roberts, Joseph, Napari, Mari, Frentrup, Martin, Huq, Tahmida, Kovács, András, Oliver, Rachel, Chalker, Paul, Sajavaara, Timo, Massabuau, Fabien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7766553/
https://www.ncbi.nlm.nih.gov/pubmed/33419277
http://dx.doi.org/10.3390/mi11121128

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7766553/
https://www.ncbi.nlm.nih.gov/pubmed/33419277
http://dx.doi.org/10.3390/mi11121128

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