Cargando…

Ti Alloyed α-Ga(2)O(3): Route towards Wide Band Gap Engineering

The suitability of Ti as a band gap modifier for [Formula: see text]-Ga(2)O(3) was investigated, taking advantage of the isostructural [Formula: see text] phases and high band gap difference between Ti(2)O(3) and Ga(2)O(3). Films of (Ti,Ga)(2)O(3) were synthesized by atomic layer deposition on sapph...

Descripción completa

Detalles Bibliográficos
Autores principales:	Barthel, Armin, Roberts, Joseph, Napari, Mari, Frentrup, Martin, Huq, Tahmida, Kovács, András, Oliver, Rachel, Chalker, Paul, Sajavaara, Timo, Massabuau, Fabien
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7766553/ https://www.ncbi.nlm.nih.gov/pubmed/33419277 http://dx.doi.org/10.3390/mi11121128

Ejemplares similares

Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
por: Roble, A. A., et al.
Publicado: (2019)

Publisher Correction: Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
por: Roble, A. A., et al.
Publicado: (2020)

Direct Band Gap Gallium Antimony Phosphide (GaSb(x)P(1−x)) Alloys
por: Russell, H. B., et al.
Publicado: (2016)

Giant bowing of the band gap and spin-orbit splitting energy in GaP(1−x)Bi(x) dilute bismide alloys
por: Bushell, Zoe L., et al.
Publicado: (2019)

Band gap engineering of In(Ga)N/GaN short period superlattices
por: Gorczyca, I., et al.
Publicado: (2017)

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
por: Christian, George, et al.
Publicado: (2018)

Band Anti-Crossing Model in Dilute-As GaNAs Alloys
por: Goodrich, Justin C., et al.
Publicado: (2019)

Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center
por: Faul, J, et al.
Publicado: (1993)

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
por: Luo, Ning, et al.
Publicado: (2016)

Investigation of Photophysical Properties of Ternary Zn–Ga–S Quantum Dots: Band Gap versus Sub-Band-Gap Excitations and Emissions
por: Yadav, Amar Nath, et al.
Publicado: (2019)

Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire
por: Barettin, Daniele, et al.
Publicado: (2023)

Characterisation of InGaN by Photoconductive Atomic Force Microscopy
por: Weatherley, Thomas F. K., et al.
Publicado: (2018)

Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO(2)
por: Waterhouse, G. I. N., et al.
Publicado: (2013)

Band-Gap Nonlinearity in Lead Chalcogenide (PbQ, Q = Te, Se, S) Alloys
por: Aminorroaya Yamini, Sima, et al.
Publicado: (2017)

Routes to control diffusive pathways and thermal expansion in Ti-alloys
por: Bönisch, Matthias, et al.
Publicado: (2020)

Validation of Pseudopotential Calculations for the Electronic Band Gap of Solids
por: Borlido, Pedro, et al.
Publicado: (2020)

An investigation into the effects of band gap and doping concentration on Cu(In,Ga)Se(2) solar cell efficiency
por: Asaduzzaman, Md., et al.
Publicado: (2016)

Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
por: Forsberg, Mathias, et al.
Publicado: (2017)

Characterization of Tunneled Wide Band Gap Mixed Conductors: The Na(2)O-Ga(2)O(3)-TiO(2) System
por: García-Fernández, Javier, et al.
Publicado: (2023)

Production of Magnetic Arsenic–Phosphorus Alloy Nanoribbons with Small Band Gaps and High Hole Conductivities
por: Zhang, Feng Fei, et al.
Publicado: (2023)

Implantation and diffusion of $^{73}$As in GaAs and GaP
por: Bösker, G, et al.
Publicado: (2000)

Dataset representing the effect of indirect band gap region of Cd-free AlGaAs buffer layer in Cu(In,Ga)Se photovoltaic cell
por: Shachi, Sadia Islam, et al.
Publicado: (2017)

Ge(1−x)Sn(x) alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration
por: Eales, Timothy D., et al.
Publicado: (2019)

Non-Band-Gap Photoexcitation of Hydroxylated TiO(2)
por: Zhang, Yu, et al.
Publicado: (2015)

Impact of alloying iron pyrite by ruthenium on its band gap values and its insight to photovoltaic performance
por: Alghamdi, Eman A., et al.
Publicado: (2023)

Nitrogen-related intermediate band in P-rich GaN(x)P(y)As(1−x−y) alloys
por: Zelazna, K., et al.
Publicado: (2017)

Complications in silane-assisted GaN nanowire growth
por: Jiang, Nian, et al.
Publicado: (2023)

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
por: Sadofyev, Yuri G., et al.
Publicado: (2010)

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors
por: Liang, Jian-Wei, et al.
Publicado: (2022)

Importance of the Kinetic Energy Density for Band Gap Calculations in Solids with Density Functional Theory
por: Tran, Fabien, et al.
Publicado: (2017)

Theoretical and experimental studies of (In,Ga)As/GaP quantum dots
por: Robert, Cedric, et al.
Publicado: (2012)

Sn-vacancy defects in GaP
por: Weyer, G, et al.
Publicado: (1983)

Correlation between band gap, dielectric constant, Young’s modulus and melting temperature of GaN nanocrystals and their size and shape dependences
por: Lu, Haiming, et al.
Publicado: (2015)

Cs(2)NaGaBr(6): a new lead-free and direct band gap halide double perovskite
por: Saeed, Yasir, et al.
Publicado: (2020)

The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga(2)O(3) Metal–Semiconductor Field-Effect Transistors
por: Ro, Han-Sol, et al.
Publicado: (2022)

Strain Mapping and Raman Spectroscopy of Bent GaP and GaAs Nanowires
por: Im, Hyung Soon, et al.
Publicado: (2018)

GaAs/GaP superlattice nanowires: growth, vibrational and optical properties
por: Arif, Omer, et al.
Publicado: (2022)

Determining Locations of Conduction Bands and Valence Bands of Semiconductor Nanoparticles Based on Their Band Gaps
por: Shao, Qi, et al.
Publicado: (2020)

Anelastic Effects in Fe–Ga and Fe–Ga-Based Alloys: A Review
por: Golovin, Igor S.
Publicado: (2023)

Indirect-to-direct band gap transition and optical properties of metal alloys of Cs(2)Te(1−x)Ti(x)I(6): a theoretical study
por: Liu, Diwen, et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_ta347qq9b1r20ddpe5ndl5frho