Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ([Formula: see text]) and Non-Polar ([Formula: see text]) GaN Nanorods

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have...

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Detalles Bibliográficos
Autores principales: Coulon, Pierre-Marie, Feng, Peng, Wang, Tao, Shields, Philip A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7766584/
https://www.ncbi.nlm.nih.gov/pubmed/33419314
http://dx.doi.org/10.3390/nano10122562

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7766584/
https://www.ncbi.nlm.nih.gov/pubmed/33419314
http://dx.doi.org/10.3390/nano10122562

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