AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping eff...

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Detalles Bibliográficos
Autores principales: Jorudas, Justinas, Šimukovič, Artūr, Dub, Maksym, Sakowicz, Maciej, Prystawko, Paweł, Indrišiūnas, Simonas, Kovalevskij, Vitalij, Rumyantsev, Sergey, Knap, Wojciech, Kašalynas, Irmantas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7766672/
https://www.ncbi.nlm.nih.gov/pubmed/33419371
http://dx.doi.org/10.3390/mi11121131

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7766672/
https://www.ncbi.nlm.nih.gov/pubmed/33419371
http://dx.doi.org/10.3390/mi11121131

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