Characterization of Electrical Traps Formed in Al(2)O(3) under Various ALD Conditions

Frequency dispersion in the accumulation region seen in multifrequency capacitance–voltage characterization, which is believed to be caused mainly by border traps, is a concerning issue in present-day devices. Because these traps are a fundamental property of oxides, their formation is expected to b...

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Detalles Bibliográficos
Autores principales: Rahman, Md. Mamunur, Shin, Ki-Yong, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7767157/
https://www.ncbi.nlm.nih.gov/pubmed/33352772
http://dx.doi.org/10.3390/ma13245809

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7767157/
https://www.ncbi.nlm.nih.gov/pubmed/33352772
http://dx.doi.org/10.3390/ma13245809

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