Cargando…

Characterization of Electrical Traps Formed in Al(2)O(3) under Various ALD Conditions

Frequency dispersion in the accumulation region seen in multifrequency capacitance–voltage characterization, which is believed to be caused mainly by border traps, is a concerning issue in present-day devices. Because these traps are a fundamental property of oxides, their formation is expected to b...

Descripción completa

Detalles Bibliográficos
Autores principales:	Rahman, Md. Mamunur, Shin, Ki-Yong, Kim, Tae-Woo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7767157/ https://www.ncbi.nlm.nih.gov/pubmed/33352772 http://dx.doi.org/10.3390/ma13245809

Ejemplares similares

Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress
por: Rahman, Md. Mamunur, et al.
Publicado: (2020)

ALD Al(2)O(3) gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT
por: Chen, Kuan-Yu, et al.
Publicado: (2020)

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO(2)/Al(2)O(3) Nanolaminated Dielectrics
por: Spassov, Dencho, et al.
Publicado: (2021)

Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor
por: Seweryn, Aleksandra, et al.
Publicado: (2021)

Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters
por: Mishra, Sushma, et al.
Publicado: (2021)

Influence of Conditioning Temperature on Defects in the Double Al(2)O(3)/ZnO Layer Deposited by the ALD Method
por: Gawlińska-Nęcek, Katarzyna, et al.
Publicado: (2021)

Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al(2)O(3) on an n-Type Silicon Substrate
por: Bhattacharjee, Atish, et al.
Publicado: (2021)

Characterization of Al Incorporation into HfO(2) Dielectric by Atomic Layer Deposition
por: Rahman, Md. Mamunur, et al.
Publicado: (2019)

ALD Deposited ZnO:Al Films on Mica for Flexible PDLC Devices
por: Dimitrov, Dimitre Z., et al.
Publicado: (2021)

The Study of Electrical Properties for Multilayer La(2)O(3)/Al(2)O(3) Dielectric Stacks and LaAlO(3) Dielectric Film Deposited by ALD
por: Feng, Xing-Yao, et al.
Publicado: (2017)

The Effect of Post Deposition Treatment on Properties of ALD Al-Doped ZnO Films
por: Petrova, Dimitrina, et al.
Publicado: (2023)

~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step
por: El-Atab, Nazek, et al.
Publicado: (2016)

Electrical and photo-electrical properties of MoS(2) nanosheets with and without an Al(2)O(3) capping layer under various environmental conditions
por: Khan, Muhammad Farooq, et al.
Publicado: (2016)

A comparative study on the evolution of the interface chemistry and electrical performance of ALD-driven Hf(x)Ti(y)Al(z)O nanolaminates
por: Gao, Juan, et al.
Publicado: (2020)

Damage Effect of ALD-Al(2)O(3) Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation
por: Ding, Man
Publicado: (2021)

Suppression of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in Different Conditions
por: Zhao, Ming-Jie, et al.
Publicado: (2020)

ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell()
por: Bethge, O., et al.
Publicado: (2013)

ALD Al(2)O(3)-Coated TiO(2) Nanotube Layers as Anodes for Lithium-Ion Batteries
por: Sopha, Hanna, et al.
Publicado: (2017)

Facile Process for Surface Passivation Using (NH(4))(2)S for the InP MOS Capacitor with ALD Al(2)O(3)
por: Lee, Jung Sub, et al.
Publicado: (2019)

On the Contact Optimization of ALD-Based MoS(2) FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
por: Mahlouji, Reyhaneh, et al.
Publicado: (2021)

A robust ALD-protected silicon-based hybrid photoelectrode for hydrogen evolution under aqueous conditions
por: Chandrasekaran, Soundarrajan, et al.
Publicado: (2019)

Organic-Component Dependent Crystal Orientation and Electrical Transport Properties in ALD/MLD Grown ZnO–Organic Superlattices
por: Ghiyasi, Ramin, et al.
Publicado: (2020)

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In(0.53)Ga(0.47)As on 300-mm Si Substrate
por: Rahman, Md. Mamunur, et al.
Publicado: (2019)

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al(2)O(3) Gate Dielectrics
por: Yoshino, Michitaka, et al.
Publicado: (2019)

ZnO ALD-Coated Microsphere-Based Sensors for Temperature Measurements
por: Listewnik, Paulina, et al.
Publicado: (2020)

Data of ALD Al(2)O(3) rear surface passivation, Al(2)O(3) PERC cell performance, and cell efficiency loss mechanisms of Al(2)O(3) PERC cell
por: Huang, Haibing, et al.
Publicado: (2016)

Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO(2) ALD Properties for Improved Electrical and Reliability Parameters
por: Falidas, Konstantinos Efstathios, et al.
Publicado: (2022)

Optical properties and bandgap evolution of ALD HfSiO(x) films
por: Yang, Wen, et al.
Publicado: (2015)

Influence of NiO ALD Coatings on the Field Emission Characteristic of CNT Arrays
por: Chumak, Maksim A., et al.
Publicado: (2022)

High Oxygen Sensitivity of TiO(2) Thin Films Deposited by ALD
por: Almaev, Aleksei V., et al.
Publicado: (2023)

The Role of ALD-ZnO Seed Layers in the Growth of ZnO Nanorods for Hydrogen Sensing
por: Lu, Yangming, et al.
Publicado: (2019)

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
por: Liu, Xiao-Yong, et al.
Publicado: (2015)

Impact of Charge-Trapping Effects on Reliability Instability in Al(x)Ga(1−x)N/GaN High-Electron-Mobility Transistors with Various Al Compositions
por: Amir, Walid, et al.
Publicado: (2023)

Erratum to: Optical properties and bandgap evolution of ALD HfSiO(x)films
por: Yang, Wen, et al.
Publicado: (2015)

ALD Zn(O,S) Thin Films’ Interfacial Chemical and Structural Configuration Probed by XAS
por: Dadlani, Anup L., et al.
Publicado: (2016)

Stability under humidity, UV-light and bending of AZO films deposited by ALD on Kapton
por: Marques, A. C., et al.
Publicado: (2019)

A flexible transparent gas barrier film employing the method of mixing ALD/MLD-grown Al(2)O(3) and alucone layers
por: Xiao, Wang, et al.
Publicado: (2015)

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al(2)O(3)/AlN Composite Gate Insulator
por: Chiu, Hsien-Chin, et al.
Publicado: (2021)

Interface Optimization and Performance Enhancement of Er(2)O(3)-Based MOS Devices by ALD-Derived Al(2)O(3) Passivation Layers and Annealing Treatment
por: Wu, Qiuju, et al.
Publicado: (2023)

Layered Si–Ti oxide thin films with tailored electrical and optical properties by catalytic tandem MLD-ALD
por: Kalderon, Boaz, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_t35u7mralu03arc0dho9utkvcd