Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)(2)O(3) on m-plane sapphire

Ultrawide-bandgap semiconductors are ushering in the next generation of high-power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here, it is found that single-crystalline layers of α-(AlGa)(2)O(3) alloys spanning bandgaps of 5.4 to 8.6 eV c...

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Detalles Bibliográficos
Autores principales: Jinno, Riena, Chang, Celesta S., Onuma, Takeyoshi, Cho, Yongjin, Ho, Shao-Ting, Rowe, Derek, Cao, Michael C., Lee, Kevin, Protasenko, Vladimir, Schlom, Darrell G., Muller, David A., Xing, Huili G., Jena, Debdeep
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7793576/
https://www.ncbi.nlm.nih.gov/pubmed/33523991
http://dx.doi.org/10.1126/sciadv.abd5891

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7793576/
https://www.ncbi.nlm.nih.gov/pubmed/33523991
http://dx.doi.org/10.1126/sciadv.abd5891

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