Four-Fold Multi-Modal X-ray Microscopy Measurements of a Cu(In,Ga)Se(2) Solar Cell

Inhomogeneities and defects often limit the overall performance of thin-film solar cells. Therefore, sophisticated microscopy approaches are sought to characterize performance and defects at the nanoscale. Here, we demonstrate, for the first time, the simultaneous assessment of composition, structure, and performance in four-fold multi-modality. Using scanning X-ray microscopy of a Cu(In,Ga)Se [Formula: see text] (CIGS) solar cell, we measured the elemental distribution of the key absorber elements, the electrical and optical response, and the phase shift of the coherent X-rays with nanoscale resolution. We found structural features in the absorber layer—interpreted as voids—that correlate with poor electrical performance and point towards defects that limit the overall solar cell efficiency.