Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption

Cryogenic Atomic Layer Etching (cryo-ALE) of SiO(2) based on alternating a C(4)F(8) molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and spectroscopic ellipsometry analyses to...

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Detalles Bibliográficos
Autores principales: Antoun, G., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Dussart, R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7801591/
https://www.ncbi.nlm.nih.gov/pubmed/33431975
http://dx.doi.org/10.1038/s41598-020-79560-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7801591/
https://www.ncbi.nlm.nih.gov/pubmed/33431975
http://dx.doi.org/10.1038/s41598-020-79560-z

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