Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption

Cryogenic Atomic Layer Etching (cryo-ALE) of SiO(2) based on alternating a C(4)F(8) molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and spectroscopic ellipsometry analyses to...

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Autores principales: Antoun, G., Tillocher, T., Lefaucheux, P., Faguet, J., Maekawa, K., Dussart, R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7801591/
https://www.ncbi.nlm.nih.gov/pubmed/33431975
http://dx.doi.org/10.1038/s41598-020-79560-z
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author Antoun, G.
Tillocher, T.
Lefaucheux, P.
Faguet, J.
Maekawa, K.
Dussart, R.
author_facet Antoun, G.
Tillocher, T.
Lefaucheux, P.
Faguet, J.
Maekawa, K.
Dussart, R.
author_sort Antoun, G.
collection PubMed
description Cryogenic Atomic Layer Etching (cryo-ALE) of SiO(2) based on alternating a C(4)F(8) molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and spectroscopic ellipsometry analyses to evaluate the residence time of physisorbed C(4)F(8) molecules versus temperature and pressure on SiO(2) surface. QMS monitoring of the SiF(4) etching by-product also enabled to follow the self-limiting etching behavior. Finally, a SiO(2) cryo-ALE process was proposed at a temperature of − 90 °C resulting in a very linear etch over 150 cycles and an Etch amount Per Cycle as low as 0.13 nm/cycle.
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spelling pubmed-78015912021-01-12 Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption Antoun, G. Tillocher, T. Lefaucheux, P. Faguet, J. Maekawa, K. Dussart, R. Sci Rep Article Cryogenic Atomic Layer Etching (cryo-ALE) of SiO(2) based on alternating a C(4)F(8) molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and spectroscopic ellipsometry analyses to evaluate the residence time of physisorbed C(4)F(8) molecules versus temperature and pressure on SiO(2) surface. QMS monitoring of the SiF(4) etching by-product also enabled to follow the self-limiting etching behavior. Finally, a SiO(2) cryo-ALE process was proposed at a temperature of − 90 °C resulting in a very linear etch over 150 cycles and an Etch amount Per Cycle as low as 0.13 nm/cycle. Nature Publishing Group UK 2021-01-11 /pmc/articles/PMC7801591/ /pubmed/33431975 http://dx.doi.org/10.1038/s41598-020-79560-z Text en © The Author(s) 2021, corrected publication 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Antoun, G.
Tillocher, T.
Lefaucheux, P.
Faguet, J.
Maekawa, K.
Dussart, R.
Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption
title Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption
title_full Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption
title_fullStr Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption
title_full_unstemmed Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption
title_short Mechanism understanding in cryo atomic layer etching of SiO(2) based upon C(4)F(8) physisorption
title_sort mechanism understanding in cryo atomic layer etching of sio(2) based upon c(4)f(8) physisorption
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7801591/
https://www.ncbi.nlm.nih.gov/pubmed/33431975
http://dx.doi.org/10.1038/s41598-020-79560-z
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