Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing

Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted...

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Detalles Bibliográficos
Autores principales: Wang, Dengkui, Gao, Xian, Tang, Jilong, Fang, Xuan, Fang, Dan, Wang, Xinwei, Lin, Fengyuan, Wang, Xiaohua, Chen, Rui, Wei, Zhipeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7804849/
https://www.ncbi.nlm.nih.gov/pubmed/33436975
http://dx.doi.org/10.1038/s41598-020-80796-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7804849/
https://www.ncbi.nlm.nih.gov/pubmed/33436975
http://dx.doi.org/10.1038/s41598-020-80796-y

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