Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing

Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted...

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Autores principales: Wang, Dengkui, Gao, Xian, Tang, Jilong, Fang, Xuan, Fang, Dan, Wang, Xinwei, Lin, Fengyuan, Wang, Xiaohua, Chen, Rui, Wei, Zhipeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7804849/
https://www.ncbi.nlm.nih.gov/pubmed/33436975
http://dx.doi.org/10.1038/s41598-020-80796-y
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author Wang, Dengkui
Gao, Xian
Tang, Jilong
Fang, Xuan
Fang, Dan
Wang, Xinwei
Lin, Fengyuan
Wang, Xiaohua
Chen, Rui
Wei, Zhipeng
author_facet Wang, Dengkui
Gao, Xian
Tang, Jilong
Fang, Xuan
Fang, Dan
Wang, Xinwei
Lin, Fengyuan
Wang, Xiaohua
Chen, Rui
Wei, Zhipeng
author_sort Wang, Dengkui
collection PubMed
description Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.
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spelling pubmed-78048492021-01-13 Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing Wang, Dengkui Gao, Xian Tang, Jilong Fang, Xuan Fang, Dan Wang, Xinwei Lin, Fengyuan Wang, Xiaohua Chen, Rui Wei, Zhipeng Sci Rep Article Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells. Nature Publishing Group UK 2021-01-12 /pmc/articles/PMC7804849/ /pubmed/33436975 http://dx.doi.org/10.1038/s41598-020-80796-y Text en © The Author(s) 2021 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Wang, Dengkui
Gao, Xian
Tang, Jilong
Fang, Xuan
Fang, Dan
Wang, Xinwei
Lin, Fengyuan
Wang, Xiaohua
Chen, Rui
Wei, Zhipeng
Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing
title Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing
title_full Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing
title_fullStr Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing
title_full_unstemmed Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing
title_short Emission characteristics variation of GaAs(0.92)Sb(0.08)/Al(0.3)Ga(0.7)As strained multiple quantum wells caused by rapid thermal annealing
title_sort emission characteristics variation of gaas(0.92)sb(0.08)/al(0.3)ga(0.7)as strained multiple quantum wells caused by rapid thermal annealing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7804849/
https://www.ncbi.nlm.nih.gov/pubmed/33436975
http://dx.doi.org/10.1038/s41598-020-80796-y
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