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CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory
Ferroelectric memory has been substantially researched for several decades as its potential to obtain higher speed, lower power consumption, and longer endurance compared to conventional flash memory. Despite great deal of effort to develop ferroelectric memory based on perovskite oxides on Si, form...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Association for the Advancement of Science
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7806215/ https://www.ncbi.nlm.nih.gov/pubmed/33523886 http://dx.doi.org/10.1126/sciadv.abe1341 |