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CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

Ferroelectric memory has been substantially researched for several decades as its potential to obtain higher speed, lower power consumption, and longer endurance compared to conventional flash memory. Despite great deal of effort to develop ferroelectric memory based on perovskite oxides on Si, form...

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Detalles Bibliográficos
Autores principales:	Kim, Min-Kyu, Kim, Ik-Jyae, Lee, Jang-Sik
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Association for the Advancement of Science 2021
Materias:	Research Articles
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7806215/ https://www.ncbi.nlm.nih.gov/pubmed/33523886 http://dx.doi.org/10.1126/sciadv.abe1341

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