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Investigation of Boron Distribution at the SiO(2)/Si Interface of Monolayer Doping
[Image: see text] Monolayer doping is a possible method for achieving complex-geometry structures with different semiconductors. Understanding the dopant diffusion behavior of monolayer doping, especially under different heating sources, is essential for further improvement. We examine and compare t...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7807803/ https://www.ncbi.nlm.nih.gov/pubmed/33458525 http://dx.doi.org/10.1021/acsomega.0c05282 |