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Investigation of Boron Distribution at the SiO(2)/Si Interface of Monolayer Doping

[Image: see text] Monolayer doping is a possible method for achieving complex-geometry structures with different semiconductors. Understanding the dopant diffusion behavior of monolayer doping, especially under different heating sources, is essential for further improvement. We examine and compare t...

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Detalles Bibliográficos
Autores principales:	Hsu, Shu-Han, Wan, Chia-Chen, Cho, Ta-Chun, Lee, Yao-Jen
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2021
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7807803/ https://www.ncbi.nlm.nih.gov/pubmed/33458525 http://dx.doi.org/10.1021/acsomega.0c05282

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