Ratio-based multi-level resistive memory cells

Ratio-based encoding has recently been proposed for single-level resistive memory cells, in which the resistance ratio of a pair of resistance-switching devices, rather than the resistance of a single device (i.e. resistance-based encoding), is used for encoding single-bit information, which signifi...

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Detalles Bibliográficos
Autores principales: Lastras-Montaño, Miguel Angel, Del Pozo-Zamudio, Osvaldo, Glebsky, Lev, Zhao, Meiran, Wu, Huaqiang, Cheng, Kwang-Ting
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7809403/
https://www.ncbi.nlm.nih.gov/pubmed/33446703
http://dx.doi.org/10.1038/s41598-020-80121-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7809403/
https://www.ncbi.nlm.nih.gov/pubmed/33446703
http://dx.doi.org/10.1038/s41598-020-80121-7

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