Microstructural evolution of tantalum nitride thin films synthesized by inductively coupled plasma sputtering

Tantalum nitride (TaN(x)) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20–100% improved microhardness values were obtained. The detailed microstructural changes of the TaN(x) films were characterized utilizing transmission electron...

Descripción completa

Detalles Bibliográficos
Autores principales: Baik, Sung-Il, Kim, Young-Woon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Singapore 2020
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818345/
https://www.ncbi.nlm.nih.gov/pubmed/33580437
http://dx.doi.org/10.1186/s42649-020-00026-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818345/
https://www.ncbi.nlm.nih.gov/pubmed/33580437
http://dx.doi.org/10.1186/s42649-020-00026-7

Ejemplares similares