Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The metal-induced gap states are induced by the end-bonded contact which su...

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Detalles Bibliográficos
Autores principales: Yao, Xiaomei, Zhang, Xutao, Kang, Tingting, Song, Zhiyong, Sun, Qiang, Wei, Dongdong, Zou, Jin, Chen, Pingping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818373/
https://www.ncbi.nlm.nih.gov/pubmed/33475892
http://dx.doi.org/10.1186/s11671-021-03476-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7818373/
https://www.ncbi.nlm.nih.gov/pubmed/33475892
http://dx.doi.org/10.1186/s11671-021-03476-4

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