Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors

Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-I...

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Detalles Bibliográficos
Autores principales: Seo, Seung Gi, Yu, Seung Jae, Kim, Seung Yeob, Jeong, Jinheon, Jin, Sung Hun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7822037/
https://www.ncbi.nlm.nih.gov/pubmed/33375000
http://dx.doi.org/10.3390/mi12010002

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7822037/
https://www.ncbi.nlm.nih.gov/pubmed/33375000
http://dx.doi.org/10.3390/mi12010002

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