Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of a...

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Detalles Bibliográficos
Autores principales: Shamakhov, Viktor, Nikolaev, Dmitriy, Slipchenko, Sergey, Fomin, Evgenii, Smirnov, Alexander, Eliseyev, Ilya, Pikhtin, Nikita, Kop`ev, Peter
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7822437/
https://www.ncbi.nlm.nih.gov/pubmed/33374632
http://dx.doi.org/10.3390/nano11010011

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7822437/
https://www.ncbi.nlm.nih.gov/pubmed/33374632
http://dx.doi.org/10.3390/nano11010011

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