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Area-Scalable 10(9)-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process
Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process. They had metal/ferroelectric/insulator/semiconductor stacked-gate structures of Ir/SBT/HfO(2)/Si. In the fabrication process, we prepare...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7823368/ https://www.ncbi.nlm.nih.gov/pubmed/33406688 http://dx.doi.org/10.3390/nano11010101 |