Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that...

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Detalles Bibliográficos
Autores principales: Lin, Yu-Shyan, Lin, Shin-Fu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7824118/
https://www.ncbi.nlm.nih.gov/pubmed/33374110
http://dx.doi.org/10.3390/mi12010007

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7824118/
https://www.ncbi.nlm.nih.gov/pubmed/33374110
http://dx.doi.org/10.3390/mi12010007

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