Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs...

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Detalles Bibliográficos
Autores principales: Ma, Chao-Tsung, Gu, Zhen-Huang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7826992/
https://www.ncbi.nlm.nih.gov/pubmed/33430093
http://dx.doi.org/10.3390/mi12010065

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7826992/
https://www.ncbi.nlm.nih.gov/pubmed/33430093
http://dx.doi.org/10.3390/mi12010065

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