Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was...

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Detalles Bibliográficos
Autores principales: Schiavon, Dario, Litwin-Staszewska, Elżbieta, Jakieła, Rafał, Grzanka, Szymon, Perlin, Piotr
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7828268/
https://www.ncbi.nlm.nih.gov/pubmed/33450822
http://dx.doi.org/10.3390/ma14020354

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7828268/
https://www.ncbi.nlm.nih.gov/pubmed/33450822
http://dx.doi.org/10.3390/ma14020354

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