Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was...

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Autores principales: Schiavon, Dario, Litwin-Staszewska, Elżbieta, Jakieła, Rafał, Grzanka, Szymon, Perlin, Piotr
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7828268/
https://www.ncbi.nlm.nih.gov/pubmed/33450822
http://dx.doi.org/10.3390/ma14020354
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author Schiavon, Dario
Litwin-Staszewska, Elżbieta
Jakieła, Rafał
Grzanka, Szymon
Perlin, Piotr
author_facet Schiavon, Dario
Litwin-Staszewska, Elżbieta
Jakieła, Rafał
Grzanka, Szymon
Perlin, Piotr
author_sort Schiavon, Dario
collection PubMed
description The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.
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spelling pubmed-78282682021-01-25 Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium Schiavon, Dario Litwin-Staszewska, Elżbieta Jakieła, Rafał Grzanka, Szymon Perlin, Piotr Materials (Basel) Article The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching. MDPI 2021-01-13 /pmc/articles/PMC7828268/ /pubmed/33450822 http://dx.doi.org/10.3390/ma14020354 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Schiavon, Dario
Litwin-Staszewska, Elżbieta
Jakieła, Rafał
Grzanka, Szymon
Perlin, Piotr
Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
title Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
title_full Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
title_fullStr Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
title_full_unstemmed Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
title_short Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
title_sort effects of movpe growth conditions on gan layers doped with germanium
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7828268/
https://www.ncbi.nlm.nih.gov/pubmed/33450822
http://dx.doi.org/10.3390/ma14020354
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