Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

Reliable p-doped hexagonal boron nitride (h-BN) could enable wide bandgap optoelectronic devices such as deep ultra-violet light emitting diodes (UV LEDs), solar blind photodiodes and neutron detectors. We report the study of Mg in h-BN layers as well as Mg h-BN/AlGaN heterostructures. Mg incorporat...

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Detalles Bibliográficos
Autores principales: Mballo, Adama, Srivastava, Ashutosh, Sundaram, Suresh, Vuong, Phuong, Karrakchou, Soufiane, Halfaya, Yacine, Gautier, Simon, Voss, Paul L., Ahaitouf, Ali, Salvestrini, Jean Paul, Ougazzaden, Abdallah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7829971/
https://www.ncbi.nlm.nih.gov/pubmed/33467590
http://dx.doi.org/10.3390/nano11010211

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7829971/
https://www.ncbi.nlm.nih.gov/pubmed/33467590
http://dx.doi.org/10.3390/nano11010211

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