Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature

In this work, a TiO(2)-coated GaN nanowire-based back-gate field-effect transistor (FET) device was designed and implemented to address the well-known cross-sensitive nature of metal oxides. Even though a two-terminal TiO(2)/GaN chemiresistor is highly sensitive to NO(2), it suffers from lack of sel...

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Detalles Bibliográficos
Autores principales: Khan, Md Ashfaque Hossain, Debnath, Ratan, Motayed, Abhishek, Rao, Mulpuri V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7830633/
https://www.ncbi.nlm.nih.gov/pubmed/33477377
http://dx.doi.org/10.3390/s21020624

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7830633/
https://www.ncbi.nlm.nih.gov/pubmed/33477377
http://dx.doi.org/10.3390/s21020624

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