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Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature
In this work, a TiO(2)-coated GaN nanowire-based back-gate field-effect transistor (FET) device was designed and implemented to address the well-known cross-sensitive nature of metal oxides. Even though a two-terminal TiO(2)/GaN chemiresistor is highly sensitive to NO(2), it suffers from lack of sel...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7830633/ https://www.ncbi.nlm.nih.gov/pubmed/33477377 http://dx.doi.org/10.3390/s21020624 |