Microstructural Effects on the Interfacial Adhesion of Nanometer-Thick Cu Films on Glass Substrates: Implications for Microelectronic Devices

[Image: see text] Improving the interface stability for nanosized thin films on brittle substrates is crucial for technological applications such as microelectronics because the so-called brittle–ductile interfaces limit their overall reliability. By tuning the thin film properties, interface adhesion can be improved because of extrinsic toughening mechanisms during delamination. In this work, the influence of the film microstructure on interface adhesion was studied on a model brittle–ductile interface consisting of nanosized Cu films on brittle glass substrates. Therefore, 110 nm thin Cu films were deposited on glass substrates using magnetron sputtering. While film thickness, residual stresses, and texture of the Cu films were maintained comparable in the sputtering processes, the film microstructure was varied during deposition and via isothermal annealing, resulting in four different Cu films with bimodal grain size distributions. The interface adhesion of each Cu film was then determined using stressed Mo overlayers, which triggered Cu film delaminations in the shape of straight, spontaneous buckles. The mixed-mode adhesion energy for each film ranged from 2.35 J/m(2) for the films with larger grains to 4.90 J/m(2) for the films with the highest amount of nanosized grains. This surprising result could be clarified using an additional study of the buckles using focused ion beam cutting and quantification via confocal laser scanning microscopy to decouple and quantify the amount of elastic and plastic deformation stored in the buckled thin film. It could be shown that the films with smaller grains exhibit the possibility of absorbing a higher amount of energy during delamination, which explains their higher adhesion energy.