Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation

Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corresponds t...

Descripción completa

Detalles Bibliográficos
Autores principales: Min, Kyunghwan, Jung, Dongmyung, Kwon, Yongwoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7843989/
https://www.ncbi.nlm.nih.gov/pubmed/33510234
http://dx.doi.org/10.1038/s41598-021-81896-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7843989/
https://www.ncbi.nlm.nih.gov/pubmed/33510234
http://dx.doi.org/10.1038/s41598-021-81896-z

Ejemplares similares