Cargando…
Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation
Herein, we present simulations of conductive filament formation in resistive random-access memory using a finite element solver. We consider the switching material, which is typically an oxide, as a two-phase material comprising low- and high-resistance phases. The low-resistance phase corresponds t...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7843989/ https://www.ncbi.nlm.nih.gov/pubmed/33510234 http://dx.doi.org/10.1038/s41598-021-81896-z |