The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

The aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high de...

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Detalles Bibliográficos
Autores principales: Grabowski, Mikolaj, Grzanka, Ewa, Grzanka, Szymon, Lachowski, Artur, Smalc-Koziorowska, Julita, Czernecki, Robert, Hrytsak, Roman, Moneta, Joanna, Gawlik, Grzegorz, Turos, Andrzej, Leszczyński, Mike
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7844007/
https://www.ncbi.nlm.nih.gov/pubmed/33510188
http://dx.doi.org/10.1038/s41598-021-81017-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7844007/
https://www.ncbi.nlm.nih.gov/pubmed/33510188
http://dx.doi.org/10.1038/s41598-021-81017-w

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