Benchmarking monolayer MoS(2) and WS(2) field-effect transistors

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS(2) and WS(2) films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS(2) FETs and 160 WS(2) FETs with channel lengths ranging from 5 μm down to 100 nm. We use s...

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Detalles Bibliográficos
Autores principales: Sebastian, Amritanand, Pendurthi, Rahul, Choudhury, Tanushree H., Redwing, Joan M., Das, Saptarshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7846590/
https://www.ncbi.nlm.nih.gov/pubmed/33514710
http://dx.doi.org/10.1038/s41467-020-20732-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7846590/
https://www.ncbi.nlm.nih.gov/pubmed/33514710
http://dx.doi.org/10.1038/s41467-020-20732-w

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