ZrO(x) Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

Here we report the ZrO(x)-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V(GS) range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO(x)/TaN capacitors is proposed to be or...

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Detalles Bibliográficos
Autores principales: Zhang, Siqing, Liu, Huan, Zhou, Jiuren, Liu, Yan, Han, Genquan, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7855158/
https://www.ncbi.nlm.nih.gov/pubmed/33532927
http://dx.doi.org/10.1186/s11671-020-03468-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7855158/
https://www.ncbi.nlm.nih.gov/pubmed/33532927
http://dx.doi.org/10.1186/s11671-020-03468-w

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