Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data processing to overcome the von Neumann bottleneck. In PCMs, data storage is driven by thermal excitation. However, there is limited research regarding...

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Detalles Bibliográficos
Autores principales: Aryana, Kiumars, Gaskins, John T., Nag, Joyeeta, Stewart, Derek A., Bai, Zhaoqiang, Mukhopadhyay, Saikat, Read, John C., Olson, David H., Hoglund, Eric R., Howe, James M., Giri, Ashutosh, Grobis, Michael K., Hopkins, Patrick E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7858634/
https://www.ncbi.nlm.nih.gov/pubmed/33536411
http://dx.doi.org/10.1038/s41467-020-20661-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7858634/
https://www.ncbi.nlm.nih.gov/pubmed/33536411
http://dx.doi.org/10.1038/s41467-020-20661-8

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