Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors

[Image: see text] Low power consumption is essential for wearable and internet-of-things applications. An effective way of reducing power consumption is to reduce the operation voltage using a very thin and high-dielectric gate insulator. In an oxide thin-film transistor (TFT), the channel layer is...

Descripción completa

Detalles Bibliográficos
Autores principales: Kang, In Hye, Hwang, Sang Ho, Baek, Young Jo, Kim, Seo Gwon, Han, Ye Lin, Kang, Min Su, Woo, Jae Geun, Lee, Jong Mo, Yu, Eun Seong, Bae, Byung Seong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7860086/
https://www.ncbi.nlm.nih.gov/pubmed/33553889
http://dx.doi.org/10.1021/acsomega.0c04924

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7860086/
https://www.ncbi.nlm.nih.gov/pubmed/33553889
http://dx.doi.org/10.1021/acsomega.0c04924

Ejemplares similares