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Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors
[Image: see text] Low power consumption is essential for wearable and internet-of-things applications. An effective way of reducing power consumption is to reduce the operation voltage using a very thin and high-dielectric gate insulator. In an oxide thin-film transistor (TFT), the channel layer is...
Autores principales: | Kang, In Hye, Hwang, Sang Ho, Baek, Young Jo, Kim, Seo Gwon, Han, Ye Lin, Kang, Min Su, Woo, Jae Geun, Lee, Jong Mo, Yu, Eun Seong, Bae, Byung Seong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2021
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7860086/ https://www.ncbi.nlm.nih.gov/pubmed/33553889 http://dx.doi.org/10.1021/acsomega.0c04924 |
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