Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs

This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30 THz. The device response in the photovoltaic mode...

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Detalles Bibliográficos
Autores principales: Calvo-Gallego, Jaime, Delgado-Notario, Juan A., Velázquez-Pérez, Jesús E., Ferrando-Bataller, Miguel, Fobelets, Kristel, Moussaouy, Abdelaziz El, Meziani, Yahya M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7864021/
https://www.ncbi.nlm.nih.gov/pubmed/33498386
http://dx.doi.org/10.3390/s21030688

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7864021/
https://www.ncbi.nlm.nih.gov/pubmed/33498386
http://dx.doi.org/10.3390/s21030688

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